PHS-memory 2GB RAM memory for Samsung NP-R510-FS0N DDR2 SO DIMM 800MHz PC2-6400S
Samsung NP-R510-FS0N, 1 x 2GBPrice in EUR including VAT
Delivered between Sat, 6.9. and Wed, 10.9.
5 pieces in stock at supplier
5 pieces in stock at supplier
free shipping
Product details
The 2GB RAM memory from PHS-memory is specifically designed for the Samsung NP-R510-FS0N model and offers a reliable and powerful upgrade for the system memory. With a storage capacity of 2 gigabytes and a clock frequency of 800 MHz (PC2-6400S), this DDR2 SO-DIMM RAM is an ideal solution for users looking to enhance their laptop's performance. Its compatibility with the Samsung NP-R510-FS0N ensures easy installation and smooth operation. The RAM operates at a voltage of 1.8 volts and features 200 pins, making it an efficient choice for various applications. This memory is a cost-effective way to improve multitasking capabilities and overall system performance.
- 100% compatible with Samsung NP-R510-FS0N
- Storage capacity of 2GB for improved performance
- Clock frequency of 800 MHz for fast data processing
- Easy installation thanks to SO-DIMM form factor.
Compatible brand | Samsung |
Compatible model | Samsung NP-R510-FS0N |
Memory configuration | 1 x 2GB |
Memory type | DDR2-RAM |
Storage clock frequency | 800 MHz |
Item number | 14218509 |
Manufacturer | PHS-memory |
Category | RAM Model-specific |
Manufacturer no. | SP181156 |
Release date | 13.11.2020 |
External links |
Compatible brand | Samsung |
Compatible model | Samsung NP-R510-FS0N |
Memory configuration | 1 x 2GB |
Memory type | DDR2-RAM |
Storage clock frequency | 800 MHz |
Storage capacity (RAM) per module | 2 GB |
Memory chip | DDR2-800 |
Memory form factor | SO-DIMM |
Number of pins | 200 x |
Voltage | 1.80 V |
CO₂-Emission | |
Climate contribution |
Product Safety |
Specifications may include unverified machine translations.
14-day cancellation right
30-day right of return
30-day right of return
24 Months statutory warranty