PHS-memory RAM suitable for Samsung NP-R710-AS02NL
Samsung NP-R710-AS02NL, 1 x 4GBPrice in EUR including VAT
Delivered between Thu, 9.4. and Tue, 14.4.
More than 10 pieces in stock at supplier
More than 10 pieces in stock at supplier
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Product details
The RAM from PHS-memory is specifically designed for the Samsung NP-R710-AS02NL model and offers a storage capacity of 4 GB. This memory is an ideal solution for enhancing system performance and ensures smooth execution of applications. With a memory clock frequency of 1066 MHz and DDR3 RAM type, this SO-DIMM RAM is optimally suited for the requirements of the Samsung NP-R710-AS02NL. The use of LPDDR3 chips ensures efficient power management and improved performance. The RAM is equipped with 204 pins and operates at a voltage of 1.5 volts, making it a reliable choice for users looking to boost their device's performance.
- 100% compatible with Samsung NP-R710-AS02NL
- Memory clock frequency of 1066 MHz
- Energy-efficient LPDDR3 chips
- SO-DIMM form factor with 204 pins.
Compatible brand | Samsung |
RAM for model | Samsung NP-R710-AS02NL |
Memory configuration | 1 x 4GB |
Memory type | DDR3-RAM |
Storage clock frequency | 1066 MHz |
Item number | 22391826 |
Manufacturer | PHS-memory |
Category | RAM Model-specific |
Manufacturer no. | SP371831 |
Release date | 16.9.2022 |
Compatible brand | Samsung |
RAM for model | Samsung NP-R710-AS02NL |
Memory configuration | 1 x 4GB |
Hardware application range | Notebook |
Memory type | DDR3-RAM |
Storage clock frequency | 1066 MHz |
Storage capacity (RAM) per module | 4 GB |
Memory chip | LPDDR3 |
Memory form factor | SO-DIMM |
Number of pins | 204x |
Voltage | 1.50 V |
CO₂ emissions | 81,33 kg |
Climate contribution | EUR 2,05 |
Product Safety |
Specifications may include unverified machine translations.
14-day cancellation right
30-day right of return
30-day right of return
24 Months statutory warranty
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